AUIRFP4110 hexfet ? power mosfet d s g to-247ac g d s gate drain source features ?? advanced process technology ?? ultra low on-resistance ?? enhanced dv/dt and di/dt capability ?? 175c operating temperature ?? fast switching ?? repetitive avalanche allowed up to tjmax ?? lead-free, rohs compliant ?? automotive qualified * description specifically designed for automo tive applications, this hexfet ? power mosfets utilizes the late st processing techniques to achieve low on-resistance per silico n area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. ordering information base part number package type standard pack form quantity AUIRFP4110 to-247ac tube 25 AUIRFP4110 complete part number v dss 100v r ds(on) typ. 3.7m ?? max 4.5m ?? i d (silicon limited) 180a ? i d (package limited) 120a parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 180 ? a i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 130 ? i dm pulsed drain current ?? 670 p d @t c = 25c maximum power dissipation 370 w linear derating factor 2.5 w/c v gs gate-to-source voltage 20 v e as (thermally limited) single pulse avalanche energy ?? 190 ? mj t j t stg operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) ? thermal resistance ? parameter typ. max. units r ? jc junction-to-case ?? ??? 0.402 c/w r ? cs case-to-sink, flat greased surface 0.24 ??? r ? ja junction-to-ambient ? ??? 40 i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) 120 i ar avalanche current ? 108 ? a e ar repetitive avalanche energy ?? 37 mj dv/dt peak diode recovery ? 5.3 v/ns s g d ? automotive grade absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-max imum-rated conditions for extended periods may affect device reliability. the thermal resistance an d power dissipation ratings are measur ed under board mount ed and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. 1 www.irf.com ? 2014 international rectifier submit datasheet feedback january 29, 2014 hexfet? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/
2 www.irf.com ? 2014 international rectifier submit datasheet feedback january 29, 2014 ? AUIRFP4110 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.108 ??? v/c reference to 25c, i d = 5ma r ds(on) static drain-to-source on-resistance ??? 3.7 4.5 m ?? v gs = 10v, i d = 75a ?? v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a i dss drain-to-source leakage current ??? ??? 20 a v ds =100 v, v gs = 0v ??? ??? 250 v ds =100v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v r g gate resistance ??? 1.3 ??? ?? dynamic electrical characteristics @ t j = 25c (unless otherwise specified) q g total gate charge ??? 150 210 nc ? i d = 75a q gs gate-to-source charge ??? 35 ??? v ds = 50v q gd gate-to-drain charge ??? 43 ??? v gs = 10v ? t d(on) turn-on delay time ??? 25 ??? ns v dd = 65v t r rise time ??? 67 ??? i d = 75a t d(off) turn-off delay time ??? 78 ??? r g = 2.6 ?? t f fall time ??? 88 ??? v gs = 10v ? c iss input capacitance ??? 9620 ??? pf ? v gs = 0v c oss output capacitance ??? 670 ??? v ds = 50v c rss reverse transfer capacitance ??? 250 ??? ? = 1.0mhz c oss eff.(er) effective output capacitance (energy related) ??? 820 ??? v gs = 0v, v ds = 0v to 80v ? c oss eff.(tr) output capacitance (time related) ??? 950 ??? v gs = 0v, v ds = 0v to 80v ? diode characteristics ? parameter min. typ. max. units conditions i s continuous source current ??? ??? 180 ? a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 670 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c,i s = 75a,v gs = 0v ?? t rr reverse recovery time ??? 50 75 ns t j = 25c v dd = 85v ??? 60 90 t j = 125c i f = 75a, q rr reverse recovery charge ??? 94 140 nc t j = 25c di/dt = 100a/s ??? ??? 140 210 t j = 125c ? i rrm reverse recovery current ??? 3.5 ??? a t j = 25c ? gfs forward trans conductance 160 ??? ??? s v ds = 50v, i d = 75a d s g notes: ? ? calculated continuous current based on maximum allowable junc tion temperature. bond wire current limit is 120a. note that current limitations arising from heat ing of the device leads may occur with some lead mounting arrangements. ? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax, starting t j = 25c, l = 0.033mh, r g = 25 ? , i as = 108a, v gs =10v. part not recommended for use above this value. ? i sd ?? 75a, di/dt ?? 630a/s, v dd ?? v (br)dss , t j ? 175c. ? pulse width ?? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same c harging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance t hat gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r ? is measured at tj approximately 90c.
3 www.irf.com ? 2014 international rectifier submit datasheet feedback january 29, 2014 ? AUIRFP4110 qualification information ? ? qualification level automotive (per aec-q101) comments: this part number(s) pass ed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level to-247ac n/a esd machine model class m4 (+/- 800) ?? aec-q101-002 human body model class h3a (+/- 6000v) ?? aec-q101-001 charged device model class c5 (+/- 2000) ?? aec-q101-005 rohs compliant yes ? qualification standards can be foun d at international rectifier?s web site: http//www.irf.com/ ?? highest passing voltage.
4 www.irf.com ? 2014 international rectifier submit datasheet feedback january 29, 2014 ? AUIRFP4110 fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs . gate-to-source voltage fig 3. typical transfer characteristics fig 2. typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 6.0v 5.5v 5.0v 4.8v bottom 4.5v ? 60s pulse width tj = 25c 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v ? 60s pulse width tj = 175c vgs top 15v 10v 8.0v 6.0v 5.5v 5.0v 4.8v bottom 4.5v 1 2 3 4 5 6 7 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 75a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 50 100 150 200 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v i d = 75a
5 www.irf.com ? 2014 international rectifier submit datasheet feedback january 29, 2014 ? AUIRFP4110 fig 8. maximum safe operating area fig 12. threshold voltage vs. temperature fig 7. typical source-drain diode forward voltage 0.00.51.01.52.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 175c single pulse 100sec 1msec 10msec dc 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 120 140 160 180 i d , d r a i n c u r r e n t ( a ) limited by package -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 90 95 100 105 110 115 120 125 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 5ma 0 20 40 60 80 100 120 v ds, drain-to-source voltage (v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 e n e r g y ( j ) fig 11. typical c oss stored energy fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 800 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 17a 27a bottom 108a fig 10. drain-to?source breakdown voltage
6 www.irf.com ? 2014 international rectifier submit datasheet feedback january 29, 2014 ? AUIRFP4110 fig 13. maximum effective transient thermal impedance, junction-to-case 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? i (sec) 0.09876251 0.000111 0.2066697 0.001743 0.09510464 0.012269 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ? c ? c ci= ? i ? ri ci= ? i ? ri 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 108a fig 15. maximum avalanche energy vs. temperature fig 14. avalanche current vs. pulse width notes on repetitive avalanche curves , figures 14, 15: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of tjmax. this is validated for every part type. 2. safe operation in avalanche is allowed as long astjmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 22a,22b. 4. pd (ave) = average power dissi pation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. iav = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not exceed t jmax (assumed as 25c in figure 14 , 15). tav = average time in avalanche. d = duty cycle in avalanche = tav f zthjc (d, tav) = transient thermal resistance, see figures 13) p d (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = pd (ave) t av 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse)
7 www.irf.com ? 2014 international rectifier submit datasheet feedback january 29, 2014 ? AUIRFP4110 fig 16. threshold voltage vs. temperature fig 17. typical recovery current vs. dif/dt fig 18. typical recovery current vs. dif/dt fig 20. typical stored charge vs. dif/dt -75 -50 -25 0 25 50 75 100 125 150 175 200 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a i d = 1.0ma i d = 1.0a 0 200 400 600 800 1000 di f /dt (a/s) 0 5 10 15 20 25 i r r ( a ) i f = 30a v r = 85v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 5 10 15 20 25 i r r ( a ) i f = 45a v r = 85v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 80 160 240 320 400 480 560 q r r ( a ) i f = 30a v r = 85v t j = 25c t j = 125c fig 19. typical stored charge vs. di f /dt 0 200 400 600 800 1000 di f /dt (a/s) 80 160 240 320 400 480 560 q r r ( a ) i f = 45a v r = 85v t j = 25c t j = 125c
8 www.irf.com ? 2014 international rectifier submit datasheet feedback january 29, 2014 ? AUIRFP4110 fig 21. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 22a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 23a. switching time test circuit fig 24a. gate charge test circuit t p v (br)dss i as fig 22b. unclamped inductive waveforms fig 23b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 24b. gate charge waveform
9 www.irf.com ? 2014 international rectifier submit datasheet feedback january 29, 2014 ? AUIRFP4110 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ac package outline dimensions are shown in millimeters (inches) to-247ac part marking information to-247ac package is not recommended for surface mount application. ywwa xx ? xx date code y= year ww= work week a= automotive, leadfree aufp4110 lot code part number ir logo
10 www.irf.com ? 2014 international rectifier submit datasheet feedback january 29, 2014 ? AUIRFP4110 ?????? important notice unless specifically designated for the auto motive market, international rectifier corporation and its subsidiaries (ir) re- serve the right to make corrections, modifications, enh ancements, improvements, and other changes to its products and services at any time and to discontinue any product or serv ices without notice. part num bers designated with the ?au? prefix follow automotive industry and / or customer specif ic requirements with regards to product discontinuance and process change notification. all products are sold subject to ir ?s terms and conditions of sale supplied at the time of or- der acknowledgment. ir warrants performance of its hardware products to the specific ations applicable at the time of sale in accordance with ir?s standard warranty. testing and other quality control te chniques are used to the extent ir deems necessary to sup- port this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or custom er product design. customers are responsible for their prod- ucts and applications using ir components. to minimize t he risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheet s is permissible only if reproduction is without alteration and is accompanied by all associated warr anties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documenta- tion. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any impl ied warranties for the associated ir product or service and is an unfair and de- ceptive business practice. ir is not res ponsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure o f the ir product could create a situation where personal inju ry or death may occur. s hould buyer purchase or use ir products for any such unintended or unauthorized applicati on, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distri butors harmless against all claims, costs, damages, and expens- es, and reasonable attorney fees arising out of, directly or i ndirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufac- ture of the product. only products certified as military grade by the defense lo gistics agency (dla) of the us department of defense, are designed and manufactured to meet dla military specifications required by certain military, aerospace or other applica- tions. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military grade products, is solely at the buyer?s ow n risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in autom otive applications or environm ents unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the des- ignation ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105
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